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Product Detailed Parameters
- Description：BIP NPN 70MA 10V FT=1.5G
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi 15GN03F-TL-E is an NPN bipolar RF transistor designed for high-frequency applications. It features a maximum collector current of 70 mA and a collector-emitter breakdown voltage of 10 V. The device operates with a transition frequency (fT) of 1.5 GHz, ensuring effective signal amplification in radio frequency circuits. Maximum power dissipation is rated at 200 mW, supporting efficient thermal management in compact designs. The component utilizes a surface-mount 3-CP package, compatible with SC-59 and SOT-23-3 footprints, facilitating automated assembly. It maintains a junction temperature rating of 150°C and exhibits a typical noise figure of 1.6 dB at 0.4 GHz.
Feature Summary
- High-speed NPN bipolar structure optimized for radio frequency signal processing
- Compact surface-mount packaging suitable for space-constrained electronic assemblies
- Robust thermal performance with elevated junction temperature capability
Applications
- RF amplifier stages in communication equipment
- Signal processing circuits in wireless transceivers
- Frequency conversion modules in radio systems
Procurement Notes
Verify the specific suffix against official documentation to confirm exact ordering parameters. Confirm RoHS compliance status and environmental declarations prior to integration. Ensure compatibility with standard surface-mount reflow profiles during manufacturing. Validate that the selected variant matches the required electrical characteristics for the target design specifications.
Selection Notes
Select this component for designs requiring low-voltage operation with high-frequency response capabilities. Consider the 1.5 GHz transition frequency for applications demanding efficient RF signal handling. Evaluate the 200 mW power dissipation limit to ensure adequate thermal management within the system architecture. Assess the small form factor benefits for dense circuit board layouts.
Part Context
This part belongs to the 15GN03 series of NPN RF transistors manufactured by onsemi. The series provides standardized solutions for radio frequency amplification tasks. The 15GN03F-TL-E variant specifically denotes the tape and reel packaging configuration. This family supports consistent performance across various consumer and industrial electronics applications.
Replacement Considerations
The 15GN03CA-TB-E is a documented substitute within the same product family. Verify pinout compatibility and electrical parameter alignment before implementation.
