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The onsemi 15GN03MA-TL-E is an NPN single RF bipolar junction transistor designed for VHF high-frequency amplifier applications. It features a maximum collector-emitter voltage of 10 V and a continuous collector current of 70 mA. The device exhibits a typical transition frequency (fT) of 1.5 GHz, ensuring effective performance in radio frequency circuits. It is housed in a surface-mount MCP package with a maximum power dissipation of 400 mW. The component supports an operating junction temperature up to 150°C and provides a typical gain magnitude |S21e|² of 13 dB at 0.4 GHz.
Verify the specific ordering suffix TL-E to confirm tape and reel packaging quantities and lead times. Ensure the MCP package variant matches your PCB footprint requirements. Cross-reference the datasheet for absolute maximum ratings to prevent thermal overstress during operation. Confirm Pb-free status if environmental compliance is mandatory for your manufacturing process.
Select this component when designing VHF circuits requiring an NPN transistor with a 1.5 GHz transition frequency. The 10 V rating suits low-voltage RF stages. Consider the 400 mW power dissipation limit for thermal management. The surface-mount format is ideal for compact designs. Evaluate the 13 dB gain specification against system noise figure requirements.
This part belongs to onsemi's RF Bipolar Transistor family, specifically tailored for high-frequency analog applications. It complements other NPN devices in the portfolio by offering a balance of voltage handling and speed suitable for VHF bands. The MCP package allows for space-constrained implementations in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers or generic equivalents.