18N10

$0.96

Description：N100V,RD(MAX)<53M@10V,RD(MAX)<63
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1650305d0330 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

Product Detailed Parameters

Description：N100V,RD(MAX)<53M@10V,RD(MAX)<63
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：53mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2161 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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18N10

Overview

The Goford Semiconductor 18N10 is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 35 A at 25°C case temperature. The device offers a maximum on-resistance (RDS(on)) of 53 mΩ at VGS = 10 V and 63 mΩ at VGS = 4.5 V. It supports a pulsed drain current of 140 A and dissipates up to 80 W of power. The component is housed in a TO-252 package with a junction-to-case thermal resistance of 1.56 °C/W.

Feature Summary

Advanced trench technology for low gate charge and excellent RDS(ON)
100% avalanche tested for robustness
RoHS compliant construction

Applications

Power switch
DC/DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and marking. Confirm that the TO-252 package variant matches the design requirements. Check for any recent updates to the datasheet version number, such as A1405.68-V1.2, to ensure alignment with the latest electrical specifications and absolute maximum ratings provided by Goford Semiconductor.

Selection Notes

Select this component for designs requiring a 100 V rating with high current handling capabilities in a surface-mount format. Consider the thermal resistance values when designing heat dissipation strategies. Ensure the gate drive voltage meets the threshold requirements for optimal conduction performance. Verify compatibility with the intended switching frequency based on the dynamic parameters provided.

Part Context

This part belongs to the Goford Semiconductor lineup of N-channel enhancement mode power MOSFETs. These devices are engineered for general-purpose power switching applications. The product line emphasizes efficiency through low on-resistance and fast switching characteristics enabled by trench technology. The 18N10 specifically targets applications needing reliable performance in compact power supply designs.