18N20J

$0.30

Description：MOSFET N-CH 200V 18A TO-251
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube

SKU:754107c674fe Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 18A TO-251
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：65.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

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18N20J

Overview

The Goford Semiconductor 18N20J is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It features a Drain-Source Voltage (VDS) of 200 V and a Continuous Drain Current (ID) of 18 A at 25°C case temperature. The device offers a maximum Drain-Source On-Resistance (RDS(on)) of 190 mΩ at VGS = 10V and ID = 9A. Key dynamic parameters include a total gate charge (Qg) of 18 nC, input capacitance (Ciss) of 850 pF, and reverse recovery time (Trr) of 239 ns. It supports a pulsed drain current of 72 A and single pulse avalanche energy of 90 mJ.

Feature Summary

Advanced trench technology for low on-resistance and fast switching
100% avalanche tested for ruggedness
RoHS compliant construction

Applications

Power switch circuits
DC/DC converters

Procurement Notes

Verify the manufacturer part number against official Goford Semiconductor documentation to confirm specifications. Ensure the TO-251 package marking matches '18N20'. Confirm RoHS compliance status with the supplier. Check thermal resistance values for your specific mounting conditions. Validate that the component meets your voltage and current requirements before integration.

Selection Notes

Select this component for applications requiring a 200V N-channel MOSFET with moderate current handling up to 18A. Consider the 190mΩ RDS(on) limit for conduction loss calculations. The TO-251 package requires appropriate heatsinking for sustained operation due to its thermal characteristics. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.

Part Context

This component belongs to the Goford Semiconductor power MOSFET family designed for general-purpose switching applications. It utilizes trench technology to achieve performance metrics suitable for efficient power conversion. The device is manufactured in a TO-251 surface-mount package, facilitating automated assembly and compact circuit board layouts.