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The 1N5401G-T is a glass passivated silicon rectifier manufactured by Diodes Incorporated, designed for general-purpose applications. It features a DO-201AD axial leaded package and delivers a maximum average forward rectified current of 3.0 A at an ambient temperature of 55°C. The device provides a peak repetitive reverse voltage of 100 V with a DC blocking voltage of 100 V. Electrical characteristics include a typical forward voltage of 1.1 V at 3.0 A and a non-repetitive peak forward surge current rating of 125 A. The component operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix 'T' corresponds to the Tape & Reel packaging format containing 1.2K units per 13-inch reel. Confirm that the procurement channel is authorized by Diodes Incorporated to ensure product authenticity and adherence to warranty terms. Check for any recent Product Change Notifications (PCNs) regarding material or process updates.
Select this component when a 100 V reverse voltage rating and 3.0 A continuous current capacity are required. Ensure the application environment supports the specified operating temperature range up to 150°C. Consider the DO-201AD through-hole package constraints for PCB layout and verify that the surge current requirements do not exceed the 125 A limit during transient events.
This part belongs to the 1N5400G–1N5408G series of 3.0A glass passivated rectifiers from Diodes Incorporated. The series offers various reverse voltage ratings ranging from 50 V to 1000 V while maintaining consistent current handling and mechanical specifications across all variants.
Compatible substitutes include other manufacturers' 1N5401 equivalents meeting the same electrical parameters. Verify pinout compatibility and package dimensions before integration. Cross-reference datasheets for thermal resistance and reverse recovery time differences.