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The 1N5711W-13 is a surface mount Schottky barrier diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 70 V and a maximum forward current of 15 mA. The device dissipates up to 333 mW with a thermal resistance of 300 °C/W. Operating temperatures range from -55°C to +125°C. Electrical characteristics include a typical forward voltage drop of 1.00 V at 15 mA, a reverse leakage current of 200 nA at 50 V, and a total capacitance of 2.0 pF. The component utilizes an SOD-123 plastic package.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the -13 suffix aligns with the required packaging configuration and shipping quantity. Ensure compliance with RoHS directives if lead-free plating is necessary for the target assembly process. Cross-reference the date code key to validate manufacturing timelines.
Select this component for circuits requiring low forward voltage and fast switching in small form factors. Evaluate the 15 mA current limit and 70 V reverse voltage rating against circuit demands. Consider the SOD-123 package dimensions for PCB layout constraints. Verify thermal dissipation requirements relative to ambient temperature conditions.
This part belongs to the 1N5711 series of Schottky barrier diodes designed for RF and ultrafast switching applications. It serves as a surface mount equivalent to traditional axial-leaded variants. The device is characterized by high breakdown voltage and low turn-on voltage, making it suitable for detection and pulse applications.
Consult official datasheets for cross-referencing with other manufacturers' Schottky diodes. Verify pinout compatibility and package dimensions when substituting. Ensure electrical parameters such as reverse voltage and forward current meet or exceed original design specifications.