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The Microchip Technology 1N5817G is a Schottky barrier rectifier diode housed in the DO-204AL (DO-41) axial through-hole package. It features a maximum repetitive peak reverse voltage of 20 V and an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 450 mV at 1 A and a maximum reverse leakage current of 1 mA at 20 V. It supports a peak forward surge current of 25 A and operates within a junction temperature range of -65°C to 150°C.
Verify the manufacturer origin carefully, as the 1N5817G part number is produced by multiple vendors including onsemi and Microchip Technology. Confirm that the specific unit received matches the required datasheet specifications, particularly regarding forward voltage and leakage current tolerances, before integration into the design.
Select this component for low-voltage, high-frequency rectification where minimal power loss is critical. Ensure the circuit's reverse voltage does not exceed 20 V and the continuous current remains within the 1 A limit. Consider the thermal management requirements given the 150°C maximum junction temperature rating for reliable long-term operation.
This component belongs to the standard 1N581x series of axial lead Schottky rectifiers. It serves as a direct replacement for generic 1N5817 devices across various manufacturers. The DO-41 package ensures compatibility with standard through-hole PCB layouts used in legacy and modern power supply designs requiring efficient rectification.
SDT20B100CT by Diodes Incorporated is listed as a similar alternative part number.