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Product Detailed Parameters
- Description：TO-252 N-CHANNEL POWER MOSFET
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The UMW 1N60L is an N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 1.2A at 25°C case temperature. The device exhibits a maximum on-state resistance of 11.5Ω at VGS=10V and ID=0.6A, with a gate threshold voltage of 4V at 250uA. Maximum power dissipation is rated at 28W at 25°C case temperature.
Feature Summary
- High rugged avalanche characteristics with specified avalanche energy limits
- Ultra-low gate charge for efficient switching performance
- Low reverse transfer capacitance to minimize Miller effect
- Improved dv/dt capability for robust operation in high-speed circuits
Applications
- High speed switching applications in power supplies
- PWM motor controls
- High efficient DC to DC converters
- Bridge circuits
Procurement Notes
Verify the specific package variant (e.g., TO-92, SOT-223) required for your design, as the 1N60L base part number spans multiple physical packages. Confirm lead-free and halogen-free status if environmental compliance is mandatory. Ensure thermal management aligns with the 28W dissipation rating at case temperature. Cross-reference pin assignments carefully across different package types to prevent installation errors.
Selection Notes
Select this component when a 600V breakdown voltage and 1.2A continuous current are sufficient for the load. The relatively high on-resistance makes it suitable for low-current applications rather than high-power delivery. Consider the specific package's thermal resistance if operating near the maximum power dissipation limit. Verify that the gate drive voltage supports the 10V specification for optimal RDS(on) performance.
Part Context
The 1N60L belongs to a family of high-voltage N-channel power MOSFETs manufactured by Unisonic Technologies. While the base model number shares similarities with older germanium signal diodes, this specific variant is a modern silicon power transistor. It is engineered to replace older discrete solutions in compact power conversion designs requiring high voltage isolation and fast switching capabilities.
Replacement Considerations
Direct substitutes include other 600V, 1.2A N-channel MOSFETs in compatible packages such as TO-92 or SOT-223. Verify that replacement devices meet or exceed the 11.5Ω RDS(on) and 5.0nC gate charge specifications. Ensure the alternative part supports the same avalanche energy requirements and has comparable dv/dt ratings for equivalent circuit performance.
