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The 1N6625US/TR is a single ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a maximum average forward rectified current of 1.5 A and a working peak reverse voltage of 1000 V. The device exhibits a fast recovery time of 80 ns with a maximum non-repetitive peak forward surge current of 15 A. It operates within a junction temperature range of -65°C to +150°C and utilizes an A-MELF surface-mount package.
Verify the specific suffix designation against the manufacturer's official documentation to confirm exact electrical tolerances and packaging configurations. Ensure compliance with relevant military specifications if required for the intended application environment. Cross-reference datasheet revisions to validate parameter consistency before integration into final designs.
Select this component when ultrafast recovery performance and high-voltage blocking capability are required in a compact surface-mount form factor. The hermetic package suitability makes it appropriate for harsh environments where standard plastic packages may fail. Evaluate thermal management requirements based on the specified operating temperature limits.
This part belongs to the 1N6625 series of ultrafast recovery rectifiers produced by Microchip Technology. The series includes variants with different voltage ratings, all sharing similar recovery characteristics and package styles designed for robust performance in demanding electronic systems.
JANTX1N6625US/TR serves as a verified substitute within the same product family, offering compatible electrical specifications and package dimensions for direct replacement in existing designs.