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Product Detailed Parameters
- Description：RF DIODE SCHOTTKY 15V SOT-666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - 3 Independent
- Voltage - Peak Reverse (Max)：15V
- Current - Max：30 mA
- Capacitance @ Vr, F：1pF @ 0V, 1MHz
- Resistance @ If, F：12Ohm @ 5mA, 1kHz
- Power Dissipation (Max)：-
- Operating Temperature：125°C (TJ)
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：-
- Qualification：-
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Overview
The Nexperia 1PS66SB82,115 is an epitaxial low capacitance Schottky barrier diode array housed in a SOT-666 (SOT-563) surface-mount package. It contains three isolated diodes with a continuous forward current rating of 30 mA and a maximum reverse voltage of 15 V. The device exhibits a typical diode capacitance of 1 pF at 0 V reverse bias and 1 MHz frequency. Forward voltage reaches 700 mV at 30 mA, while reverse leakage current is limited to 0.2 µA at 1 V. Junction temperature tolerance extends up to 125 °C.
Feature Summary
- Epitaxial Schottky barrier construction for high-speed switching
- Low diode capacitance suitable for RF applications
- Very small SMD plastic package footprint
Applications
- Ultra high-speed switching in digital circuits
- Clamping circuits
- Diode ring mixers
- RF detectors
- RF voltage doublers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component status remains active or acceptable for new designs. Ensure compliance with RoHS3 specifications and REACH regulations as stated in the datasheet. Check for any recent product change notices regarding manufacturing location or packaging updates.
Selection Notes
Select this component when low parasitic capacitance is critical for signal integrity in high-frequency environments. The triple isolated configuration allows for flexible circuit topologies requiring multiple independent switching elements. Verify thermal resistance requirements against the application's ambient temperature conditions to ensure reliable operation within the specified junction temperature limits.
Part Context
This part belongs to the 1PS66/1PS88 series of low capacitance Schottky diodes. The 1PS88SB82 variant shares identical electrical characteristics but utilizes the SOT-363 (SC-88) package instead of the SOT-666 form factor used by the 1PS66SB82. Both devices are designed for compact digital and RF applications requiring minimal physical space.
Replacement Considerations
No direct public substitute part numbers are documented for this specific component in the provided source material.
FAQ
What is the pin configuration for the 1PS66SB82?
Pins 1, 2, and 3 serve as the anodes for diodes 1, 2, and 3 respectively. Pins 4, 5, and 6 function as the cathodes for diodes 3, 2, and 1.
How does the diode capacitance vary with reverse voltage?
The diode capacitance decreases as the reverse voltage increases, starting from a typical value of 1 pF at 0 V reverse bias measured at 1 MHz.
What is the recommended soldering method for this device?
Reflow soldering is the only recommended soldering method for this component.
