1SV267-TB-E

Overview

The onsemi 1SV267-TB-E is a PIN diode configured as one pair in series, designed for radio frequency applications. It features a maximum peak reverse voltage of 50V and a maximum forward current of 50 mA. The device dissipates up to 150 mW of power and operates at junction temperatures reaching 125°C. Electrical characteristics include a capacitance of 0.23 pF at 50V reverse bias and 1MHz frequency, with a resistance of 2.5 ohms at 10mA forward current and 100MHz frequency. It is housed in a compact 3-CP package, equivalent to TO-236-3, SC-59, or SOT-23-3.

Feature Summary

• Series-connected PIN diode pair configuration optimized for RF signal control
• Low capacitance performance suitable for high-frequency switching applications
• Compact surface-mount packaging facilitating automated assembly

Applications

• RF switching circuits
• Attenuator modules
• Phase shifters

Procurement Notes

Verify component authenticity through authorized distribution channels due to the End-of-Life status indicated by Product Change Notification PCN Mult Dev EOL dated September 30, 2022. Confirm RoHS3 compliance and material declarations via official manufacturer documentation before integration into production systems.

Selection Notes

Select this component when a series-connected PIN diode structure is required for RF paths. Ensure the 50V reverse voltage rating meets circuit requirements. Verify that the 3-CP package footprint aligns with the printed circuit board layout constraints.

Part Context

This part belongs to the 1SV267 series of RF PIN diodes manufactured by onsemi. It serves as a specialized semiconductor device for controlling radio frequency signals in communication equipment and test instrumentation systems.

Replacement Considerations

The 1SV264-TL-E is listed as a manufacturer-recommended alternative. Evaluate electrical parameter compatibility and package differences before substitution.