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Product Detailed Parameters
- Description：PIN DIODE
- Series：*
- Mfr：onsemi
- Package：Bulk
- Diode Type：-
- Voltage - Peak Reverse (Max)：-
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi 1SV268-TD-E is a varactor diode designed for RF applications. It features a maximum reverse voltage (Vrwm) of 3.6 V and a low capacitance of 4.5 pF. The device is capable of withstanding surge events up to 15 kV, making it suitable for protecting sensitive lines. It is housed in an encapsulated 0.445 x 0.24 mm package, providing a compact form factor for modern electronic designs requiring high reliability and small footprint solutions.
Feature Summary
- ESD and surge protection capability rated at 15 kV
- Low capacitance design for minimal signal interference
- Compact encapsulated package for space-constrained layouts
Applications
- USB D+/- line protection
- GPIO line protection
- Audio line protection
Procurement Notes
Verify the specific ordering suffix matches the required package and tape/reel configuration. Confirm that the Vrwm and capacitance specifications align with the target circuit requirements. Ensure the manufacturer part number corresponds exactly to the intended component variant before finalizing procurement orders to avoid integration issues.
Selection Notes
Select this component when designing circuits requiring robust ESD protection for high-speed data or audio interfaces. The low capacitance value ensures signal integrity is maintained during normal operation. Consider the 15 kV surge rating for environments with higher electrostatic discharge risks. Verify compatibility with the specific voltage levels present on the protected lines.
Part Context
This component belongs to onsemi's portfolio of ESD protection devices. It is categorized under RF diodes and bus protectors. The product line focuses on safeguarding sensitive I/O ports against transient voltage events while maintaining high-frequency performance characteristics essential for modern communication standards.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official distributor databases or onsemi technical support for cross-reference information regarding equivalent components with similar electrical specifications and package dimensions.
