1SV271TPH3F

Overview

The 1SV271TPH3F is a silicon epitaxial PIN diode manufactured by Toshiba Semiconductor and Storage, designed for VHF to UHF band RF attenuator applications. It features a USC surface-mount package (SC-76/SOD-323) with a maximum reverse voltage of 10V. Key electrical characteristics include a typical total capacitance (CT) of 0.25 pF and a low series resistance (RS) of 3 ohms. The device supports a junction temperature up to 125°C and complies with RoHS3 standards. Its small signal performance makes it suitable for compact tuner designs requiring precise RF attenuation control.

Feature Summary

• Optimized for VHF and UHF band RF attenuator circuits
• Ultra-low total capacitance for high-frequency signal integrity
• Low series resistance to minimize insertion loss
• Compact USC surface-mount package for space-constrained designs

Applications

• Small size tuners in consumer electronics
• VHF/UHF band RF signal attenuation circuits
• Mobile communication device front-end modules
• RF switching and attenuation networks

Procurement Notes

Verify the manufacturer part number 1SV271TPH3F against official Toshiba Semiconductor documentation to ensure authenticity. Confirm that the USC package variant matches your PCB footprint requirements. Check for RoHS3 compliance status if required by your regional regulations. Ensure storage conditions maintain moisture sensitivity level 1 integrity prior to assembly.

Selection Notes

Select this component when designing VHF or UHF RF attenuators requiring minimal parasitic capacitance. The 0.25 pF typical CT value ensures high-frequency performance. Verify that the 3 ohm series resistance meets your insertion loss specifications. The USC package is ideal for automated surface-mount assembly processes in compact electronic devices.

Part Context

This part belongs to Toshiba's 1SV series of silicon epitaxial PIN diodes. These components are specifically engineered for radio frequency applications in the VHF and UHF spectrum. The series offers various packages and electrical characteristics to suit different RF circuit requirements, including attenuators, switches, and phase shifters.

Replacement Considerations

Publicly confirmed substitute part numbers for 1SV271TPH3F are not available in the provided reference data. Consult Toshiba Semiconductor technical support for qualified alternatives or cross-reference options based on specific RF performance parameters.