2001

Overview

The Microsemi Corporation 2001 is a Bipolar NPN RF Transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 50V and a transition frequency of 2GHz. The device provides a gain of 9.5dB at its operating point. This component is classified under discrete semiconductor products, specifically bipolar transistors. It is currently marked as obsolete in the manufacturer's catalog.

Feature Summary

• NPN transistor configuration optimized for radio frequency signal processing
• Capable of operation at microwave frequencies up to 2GHz
• Designed for high-speed switching and amplification tasks

Applications

• RF amplifier circuits
• Microwave communication systems
• High-frequency signal processing modules

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Verification of availability should focus on surplus distributors or secondary market channels rather than direct manufacturing supply. Confirm end-of-life status and potential replacement options before initiating procurement processes.

Selection Notes

Select this part only if legacy compatibility with 50V NPN RF stages is required. Evaluate thermal management requirements due to power dissipation limits. Ensure circuit design accommodates the specific gain characteristics and frequency response defined in the technical specifications.

Part Context

Microsemi Corporation specialized in high-reliability semiconductors for aerospace and defense markets. The 2001 series represents their historical portfolio of discrete RF components. These devices were engineered to meet stringent performance standards for critical communication infrastructure.

Replacement Considerations

No public confirmed substitute part numbers are available for this obsolete component. Engineers must evaluate alternative NPN RF transistors with matching 50V ratings and 2GHz transition frequencies from current manufacturers.