23A025

Bipolar RF Transistors Overview

The Microsemi Corporation 23A025 is an NPN RF bipolar transistor designed for high-frequency applications up to 3.7GHz. It delivers a power output of 9W and operates with a voltage rating of 22V. The device features a gain range of 6dB to 6.3dB and is housed in a 55BT chassis mount package.

Bipolar RF Transistors Feature Summary

• NPN RF bipolar construction optimized for high-frequency performance
• Capable of delivering 9W power output at frequencies up to 3.7GHz
• Designed for chassis mounting in robust RF environments

Bipolar RF Transistors Applications

• High-frequency RF amplifier stages
• Linear Class A amplification systems
• Microwave communication equipment

Bipolar RF Transistors Procurement Notes

Verify the specific package type and thermal requirements against your chassis design. Confirm that the 22V rating and 3.7GHz frequency limit align with your system specifications. Check for any RoHS compliance documentation if required by your manufacturing standards.

Bipolar RF Transistors Selection Notes

Select this component when a high-power NPN RF solution is needed for frequencies approaching 3.7GHz. Consider the chassis mount requirement and ensure adequate heat dissipation infrastructure is available for the 9W output capability.

Bipolar RF Transistors Part Context

This part belongs to the Microsemi RF Bipolar Transistor family, specifically targeting linear RF applications. It serves as a power amplification element within microwave and radio frequency circuits requiring stable gain and high output power.

Bipolar RF Transistors Replacement Considerations

Public confirmed substitute part numbers are not provided in the source data.