2729GN-270V

Overview

The Microchip Technology 2729GN-270V is a Gallium Nitride (GaN) field-effect transistor designed for high-power radio frequency applications. It operates within the 2700 to 2900 MHz frequency range and delivers an output power of 270W at 50V. The device features a drain-source breakdown voltage of 125V and a continuous drain current of 24mA. With a maximum power dissipation of 517W, it utilizes GaN-on-SiC technology. The component is housed in a 55-QP package with screw mount installation style.

Feature Summary

• Utilizes GaN-on-SiC technology for enhanced RF performance
• Designed for high-power amplification in UHF bands
• Features screw mount installation for robust integration

Applications

• UHF radar systems
• Communications infrastructure
• Electronic warfare equipment

Procurement Notes

Verify availability directly with the manufacturer as this item may be subject to special order requirements. Confirm specific ordering suffixes and technical specifications against the official datasheet before procurement. Ensure compatibility with existing thermal management solutions due to high power dissipation characteristics.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.7-2.9 GHz range. Consider the 55-QP package size and screw mount requirement during PCB layout. Evaluate thermal resistance parameters to ensure adequate heat sinking for sustained 270W operation.

Part Context

This part belongs to Microchip's portfolio of GaN FETs, specifically targeting RF power amplifier designs. It complements other wide-bandgap semiconductor solutions by offering higher electron mobility and breakdown voltage compared to traditional silicon-based transistors in similar frequency bands.