2ED2110S06MXUMA1

$2.24

Description：IC GATE DRVR HI/LOW SIDE 16SOIC
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c0b67496c870 Category: Gate Drivers Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2ED2110S06MXUMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HI/LOW SIDE 16SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 2ED2110S06MXUMA1

Description：IC GATE DRVR HI/LOW SIDE 16SOIC
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：High-Side and Low-Side
Channel Type：Independent
Number of Drivers：2
Gate Type：IGBT, MOSFET (N-Channel)
Voltage - Supply：10V ~ 20V
Logic Voltage - VIL, VIH：6V, 14V
Current - Peak Output (Source, Sink)：2.5A, 2.5A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：25ns, 17ns
Operating Temperature：-40°C ~ 125°C (TA)
Mounting Type：Surface Mount
Package / Case：16-SOIC (0.295", 7.50mm Width)
Supplier Device Package：16-SOIC
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：650 V

Gate Driver datasheet and documents for 2ED2110S06MXUMA1

2ED2110S06MXUMA1

Gate Driver Overview

The Infineon Technologies 2ED2110S06MXUMA1 is a high-voltage, high-speed gate driver designed for power MOSFETs and IGBTs. It features a half-bridge configuration with two drivers and two outputs in a DSO-16 package. The device operates within a supply voltage range of 10 V to 20 V. It delivers a source/sink output current of 2.5 A. Key timing parameters include a rise time of 15 ns and a fall time of 15 ns. The component supports an operating temperature range from -40 °C to +125 °C.

Gate Driver Feature Summary

Integrates floating input protection for the high-side channel
Includes an integrated bootstrap diode for level shifting
Utilizes Silicon-On-Insulator (SOI) technology for robust isolation

Gate Driver Applications

Industrial motor drives
Switched-mode power supplies
Inverter circuits

Gate Driver Procurement Notes

Verify the specific ordering suffix matches the required package variant and tape/reel specifications. Confirm that the SOI technology requirements align with the system's isolation needs. Ensure the thermal management design accommodates the specified power dissipation limits under maximum load conditions.

Gate Driver Selection Notes

Select this component when a compact half-bridge solution with integrated bootstrap functionality is required. The 2.5 A drive current suits medium-power applications. Consider the 16-pin DSO package for PCB space constraints. Validate compatibility with CMOS or LSTTL logic inputs for control interface integration.

Gate Driver Part Context

This part belongs to the EiceDRIVER family, which utilizes Silicon-On-Insulator technology. This family provides galvanic isolation between low-voltage control signals and high-voltage power stages. The series offers various configurations tailored for different voltage levels and current requirements in power electronics.