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Product Detailed Parameters
- Description：TRANS 100V 30A TO-63
- Series：-
- Mfr：General Semiconductor
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：30 A
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 1A, 10A
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 20A, 3V
- Power - Max：118 W
- Frequency - Transition：20MHz
- Operating Temperature：-
- Mounting Type：Stud Mount
- Package / Case：TO-211MB, TO-63-4, Stud
- Supplier Device Package：TO-63
- Grade：-
- Qualification：-
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Overview
The 2N2824 is a single NPN bipolar junction transistor manufactured by General Semiconductor. It features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 30 A. The device is designed for stud mount applications within the TO-63 package configuration. It offers a transition frequency of 20 MHz and supports a maximum power dissipation of 118 W. These specifications define its operational limits and physical mounting requirements.
Feature Summary
- High current handling capability with a 30 A maximum collector current rating
- Robust thermal design suitable for stud mount installation in the TO-63 package
- Defined switching performance characterized by a 20 MHz transition frequency
Applications
- Power amplifier circuits requiring high current output
- Industrial motor control systems utilizing stud-mounted transistors
- High-power switching applications within defined voltage limits
Procurement Notes
Verify the manufacturer designation as General Semiconductor, which is part of Vishay Intertechnology. Confirm the package type is strictly TO-63 (Stud Mount) to ensure mechanical compatibility. Check RoHS compliance status, as lead-free variants are available. Ensure the specific ordering suffix matches the required pinout and thermal characteristics. Request official datasheets to validate electrical parameters against application requirements before procurement.
Selection Notes
Select this component when a high-current NPN transistor with a stud mount interface is required. The 100 V breakdown voltage and 30 A current capacity suit moderate-to-high power applications. Consider the TO-63 package for direct chassis mounting and efficient heat dissipation. Evaluate the 118 W power dissipation limit against thermal management solutions. Compare transition frequency requirements to ensure suitability for the intended signal speeds.
Part Context
The 2N2824 belongs to the category of single bipolar transistors produced by General Semiconductor. It is classified under discrete semiconductors and specifically as a power transistor. The device utilizes the TO-63 package standard for stud mounting. This classification indicates its role in high-power electronic circuits where robust construction and thermal stability are critical for reliable operation.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available documentation. Verify cross-reference data through official manufacturer channels or authorized distributors. Ensure any replacement maintains identical voltage, current, and package specifications. Consult technical support for validated alternatives if the original component is unavailable.
