Single Bipolar Transistors 2N3013 product image

2N3013

$23.50
  • Description:SMALL-SIGNAL BJT
  • Series:*

SKU:3c0f37e70866 Category: Brand:

  
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2N3013 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3013

  • Description:SMALL-SIGNAL BJT
  • Series:*
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3013

2N3013

Single Bipolar Transistors Overview

The Microchip Technology 2N3013 is a silicon NPN small-signal bipolar junction transistor (BJT) housed in a TO-18 metal can package. It features a maximum collector-emitter voltage of 15 V and a continuous collector current rating of 200 mA. The device supports a transition frequency of 350 MHz and has a maximum power dissipation of 360 mW. DC current gain is specified at a minimum of 30 under standard test conditions.

Single Bipolar Transistors Feature Summary

  • Designed for high-speed saturated switching applications
  • Suitable for high-frequency amplifier circuits
  • Utilizes a hermetically sealed metal can construction

Single Bipolar Transistors Applications

  • High-speed saturated switching circuits
  • High-frequency amplifier stages
  • Medium power switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels, as the 2N3013 is a legacy part with potential availability constraints. Confirm RoHS compliance status, as historical data indicates non-compliance for certain manufacturers. Ensure the TO-18 package matches system requirements. Check datasheet revisions for specific electrical parameter tolerances before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching capabilities in a traditional metal can form factor. Consider the 15 V voltage limit and 200 mA current capacity against load requirements. Evaluate the 350 MHz transition frequency for signal integrity in high-speed environments. Compare thermal dissipation limits against ambient operating conditions to ensure reliable performance within the 360 mW constraint.

Single Bipolar Transistors Part Context

The 2N3013 belongs to a family of silicon NPN switching transistors historically used in medium-power applications. It serves as a general-purpose discrete semiconductor device for analog and digital circuit implementations. The TO-18 package provides mechanical stability and thermal conductivity suitable for through-hole mounting in industrial and commercial electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided source material. Verify cross-reference compatibility with other manufacturers' 2N3013 equivalents based on pinout and electrical specifications.

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