2N3117 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3117 is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting in the TO-18 metal can package. It features a drain-source breakdown voltage of 40V and a continuous drain current rating of 50mA. The device operates within a temperature range of -65°C to +200°C, utilizing tin/lead terminations.

Single Bipolar Transistors Feature Summary

• Utilizes a hermetically sealed TO-18 metal can package for robust environmental protection.

Single Bipolar Transistors Applications

• Low-noise amplifier circuits
• High-impedance input stages
• Analog switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Central Semiconductor assets have undergone corporate restructuring. Confirm that the component meets required military or industrial specifications if applicable, and ensure the tin/lead termination finish aligns with assembly compatibility requirements.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized, through-hole JFET with high-temperature capability is required. The TO-18 package offers superior thermal dissipation compared to plastic packages. Ensure the circuit design accommodates the 40V breakdown limit and 50mA current constraint.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete silicon N-channel JFETs manufactured by Central Semiconductor Corp. These devices are characterized by high input impedance and low noise figures, making them suitable for precision analog signal processing tasks where reliability under extreme temperatures is critical.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other TO-18 N-channel JFETs such as the 2N5457 or 2N5458, ensuring pinout compatibility and verifying that electrical parameters like Vgs(off) and Idss fall within acceptable tolerances for the specific application.