2N3393 TRE TIN/LEAD

Single Bipolar Transistors Overview

The 2N3393 TRE TIN/LEAD is a small signal NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 25V and a minimum DC current gain (hFE) of 90. The device is housed in a TO-92 through-hole package with leaded terminals, designed for general-purpose amplification and switching applications within an operating temperature range suitable for standard electronic environments.

Single Bipolar Transistors Feature Summary

• Utilizes silicon planar technology for reliable small-signal performance
• Provides low noise characteristics suitable for sensitive audio or RF stages
• Offers high DC current gain for effective signal amplification
• Features a robust TO-92 through-hole package for standard PCB mounting

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low-noise signal processing stages
• Electronic switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the presence of tin/lead terminations versus lead-free alternatives. Ensure the selected variant matches the required environmental compliance standards for the target assembly process. Cross-reference the manufacturer's datasheet for absolute maximum ratings to prevent operational overstress during design integration.

Single Bipolar Transistors Selection Notes

Select this component when a low-noise NPN transistor with moderate voltage handling is required. The TO-92 form factor supports manual or wave soldering processes. Confirm that the 25V breakdown voltage aligns with the circuit's supply rails and signal swings to maintain safe operating area margins under all expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to Central Semiconductor's discrete transistor portfolio, specifically categorized as a small-signal BJT. The 2N3393 designation indicates a standardized electrical profile often used in legacy and modern designs requiring reliable NPN switching or linear amplification capabilities in compact through-hole configurations.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with comparable 25V Vceo and TO-92 packaging. Verify pinout compatibility and hFE ranges before substitution to ensure circuit stability without redesign.