2N3439P

Single Bipolar Transistors Overview

The Microchip Technology 2N3439P is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 350V and a continuous collector current rating of 1A. The device has a maximum power dissipation of 800mW at 25°C ambient temperature. It utilizes the TO-39 metal can package, providing robust construction suitable for high-reliability applications.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 350V collector-emitter breakdown rating
• Capable of handling 1A continuous collector current
• Constructed in a hermetically sealed TO-39 metal can package

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power amplifier stages
• General-purpose discrete transistor applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact electrical tolerances and qualification levels. Ensure the ordering part number matches the required package style and performance grade before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN BJT is required in a TO-39 package. Consider the 800mW power dissipation limit and thermal management requirements during circuit design to ensure operation within safe limits.

Single Bipolar Transistors Part Context

This component belongs to the Microchip 2N3439 family of power BJTs. Variants such as JANTX2N3439P exist with different qualification standards. The base 2N3439 designation defines the core electrical characteristics shared across the series.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.