2N3707 APM TIN/LEAD

$0.48

Description：30V 200MA 625MW TH TRANSISTOR-SM
Series：-

SKU:a384a474972b Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N3707 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 200MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3707 APM TIN/LEAD

Description：30V 200MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：1V @ 500µA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N3707 APM TIN/LEAD

2N3707 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3707 APM TIN/LEAD is a single NPN general-purpose small-signal bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92 package. It features a maximum DC collector current of 200 mA and a collector-emitter breakdown voltage (VCEO) of 30 V. The device supports a power dissipation of 625 mW and operates within a temperature range of -65°C to +150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum of 400, with a collector-emitter saturation voltage of 1 V.

Single Bipolar Transistors Feature Summary

Single NPN configuration optimized for general-purpose amplification and switching applications
Through-hole construction utilizing a standard TO-92 leaded package
Tin/lead terminal finish compliant with specific material requirements

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Electronic switching applications
Low-power discrete transistor designs

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix explicitly includes 'APM' and 'TIN/LEAD' to ensure the correct leaded terminal finish is supplied. Confirm RoHS status details as tin/lead compositions often differ from standard environmental directives. Validate the manufacturer part number against official Central Semiconductor documentation to avoid confusion with Pb-free variants or alternative package styles.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN BJT with a 30 V collector-emitter rating and 200 mA continuous current capacity is required. The TO-92 package facilitates manual assembly or wave soldering processes. Ensure the application does not exceed the 625 mW power dissipation limit under expected operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the Central Semiconductor 2N3707 series of small-signal transistors. The 'APM' designation typically indicates an Automotive Product Material specification, while 'TIN/LEAD' specifies the terminal plating composition. This distinguishes it from the standard 2N3707 PBFREE version which utilizes lead-free terminals.