2N3707 TRE PBFREE

$0.43

Description：30V 200MA 625MW TH TRANSISTOR-SM
Series：-

SKU:fbf09a215f95 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N3707 TRE PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 200MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3707 TRE PBFREE

Description：30V 200MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：1V @ 500µA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N3707 TRE PBFREE

2N3707 TRE PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3707 TRE PBFREE is an NPN general-purpose small-signal bipolar junction transistor (BJT) designed for through-hole mounting in TO-92 packages. It supports a maximum DC collector current of 200 mA and features a collector-emitter voltage rating of 30 V, with a collector-base voltage of 30 V and an emitter-base voltage of 6 V. The device dissipates up to 625 mW of power and operates within a temperature range of -65°C to +150°C. Its DC current gain ranges from a minimum of 100 to a maximum of 400, ensuring reliable amplification and switching performance.

Single Bipolar Transistors Feature Summary

Provides high DC current gain suitable for low-power amplification applications
Supports wide operating temperature range for robust environmental stability
Features standard through-hole packaging for easy integration into legacy circuits

Single Bipolar Transistors Applications

General-purpose signal amplification
Low-frequency switching circuits
Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and tape-and-reel configuration. Ensure RoHS compliance documentation matches project requirements. Cross-reference manufacturer part numbers with distributor listings to avoid counterfeit components. Confirm lead times directly with authorized suppliers as production cycles may vary based on demand.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN BJT with moderate current handling and high gain is required for through-hole designs. Compare its 30 V breakdown voltage and 200 mA limit against circuit demands. Consider thermal management needs given the 625 mW dissipation rating in enclosed spaces. Evaluate alternative packages if surface-mount space constraints exist.

Single Bipolar Transistors Part Context

This transistor belongs to the broader family of small-signal BJTs used in consumer electronics and industrial control systems. It serves as a fundamental discrete semiconductor element for basic logic and analog functions. The 2N3707 designation indicates a standardized military-grade specification often adapted for commercial use by various manufacturers including Central Semiconductor.