2N3711 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3711 is a silicon NPN epitaxial planar power transistor designed for high-voltage, high-frequency applications. It features a maximum collector-emitter voltage (VCEO) of 400 V and a continuous collector current (IC) of 5 A. The device has a maximum power dissipation (PD) of 80 W at 25°C case temperature. Key electrical parameters include a minimum DC current gain (hFE) of 20 and a transition frequency (fT) of 10 MHz. It utilizes a hermetically sealed metal case construction with tin/lead plated terminals.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding power switching environments
• Robust hermetically sealed metal case construction for reliability
• Designed for high-frequency operation with specified transition frequency

Single Bipolar Transistors Applications

• High voltage switching circuits
• Audio output stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific terminal plating configuration matches project requirements, as tin/lead finishes are subject to regulatory restrictions in certain jurisdictions. Confirm that the hermetic seal integrity meets environmental standards for the intended operating conditions. Ensure thermal management solutions account for the 80 W power dissipation rating under appropriate case temperature constraints.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capability and moderate current handling are required in a rugged package. Compare against alternative NPN power transistors regarding voltage margins and thermal resistance characteristics. Consider the through-hole mounting style and metal case thermal properties for heat sink integration in the final design.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete bipolar junction transistors manufactured by Central Semiconductor Corp. It is classified as a power transistor utilizing epitaxial planar technology. The device is distinct from low-power signal transistors due to its higher voltage and current ratings and specialized packaging for thermal performance.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Generic replacements may differ in pinout, thermal resistance, or voltage ratings. Verify compatibility with existing circuit constraints before implementation.