Single Bipolar Transistors 2N3771 product image

2N3771

$1.15
  • Description:TRANS NPN 40V 30A TO-3
  • Series:-

SKU:6c7235d21873 Category: Brand:

  
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2N3771 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 40V 30A TO-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3771

  • Description:TRANS NPN 40V 30A TO-3
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):30 A
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:4V @ 6A, 30A
  • Current - Collector Cutoff (Max):10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 15A, 4V
  • Power - Max:150 W
  • Frequency - Transition:200kHz
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3771

2N3771

Single Bipolar Transistors Overview

The STMicroelectronics 2N3771 is a high-power NPN silicon epitaxial-base transistor housed in a TO-3 metal case. It features a collector-emitter voltage of 40 V, a continuous collector current of 30 A, and a total power dissipation of 150 W at 25°C. The device includes a thermal resistance junction-to-case of 1.17 °C/W. Designed for linear amplifiers and inductive switching applications, it offers a DC current gain ranging from 5 to 60 depending on the operating point.

Single Bipolar Transistors Feature Summary

  • Epitaxial-base NPN silicon construction
  • High power handling capability
  • Metal TO-3 package design

Single Bipolar Transistors Applications

  • Linear amplifiers
  • Inductive switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific part number against the official datasheet to ensure correct voltage ratings and package type. Confirm that the TO-3 metal case meets your mechanical mounting requirements. Check for any updates or superseding documents on the manufacturer's website before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for high-current linear and switching tasks requiring robust metal packaging. Ensure adequate heatsinking is provided to maintain the junction temperature within limits given the 150 W dissipation rating. Evaluate the 40 V collector-emitter voltage against the circuit's maximum operating conditions to prevent breakdown.

Single Bipolar Transistors Part Context

This component belongs to the category of high-power discrete transistors manufactured by STMicroelectronics. It utilizes silicon epitaxial-base technology and is packaged in the standard TO-3 metal case. The device is intended for industrial applications demanding high current handling and reliable performance in linear and switching modes.

Single Bipolar Transistors Replacement Considerations

The 2N3772 is an officially documented related variant with higher voltage ratings (60 V VCEO). Verify if the increased voltage capability is required or if the lower cost option suffices. No other direct substitutes are confirmed in the provided documentation.

2N37712N3771
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