RF FETs, MOSFETs 2N3819_D27Z product image

2N3819_D27Z

$0.05
  • Description:RF MOSFET JFET 25V TO92-3
  • Series:-

SKU:ceeb2b01d5c5 Category: Brand:

  
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2N3819_D27Z is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is RF MOSFET JFET 25V TO92-3. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for 2N3819_D27Z

  • Description:RF MOSFET JFET 25V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:JFET
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):50mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:25 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Configuration:N-Channel

RF FETs, MOSFETs datasheet and documents for 2N3819_D27Z

2N3819_D27Z

RF FETs, MOSFETs Overview

The onsemi 2N3819_D27Z is an N-channel RF amplifier and mixer transistor designed for applications operating up to 450MHz. It features a TO-92 package with three leads: Drain, Gate, and Source. The device supports a maximum drain current of 50 mA and a drain-gate voltage of 25 V. Key electrical characteristics include a gate-source breakdown voltage of 25 V and a zero-gate voltage drain current ranging from 2.0 to 20 mA. Small signal performance includes a forward transfer conductance between 2000 and 6500 µmhos at 1.0 KHz.

RF FETs, MOSFETs Feature Summary

  • Designed for RF amplifier and mixer applications operating up to 450MHz
  • Suitable for analog switching requiring low capacitance
  • Epitaxial silicon construction in a TO-92 through-hole package

RF FETs, MOSFETs Applications

  • RF amplification
  • Mixer circuits
  • Analog switching

RF FETs, MOSFETs Procurement Notes

Verify the component status as obsolete or discontinued by checking official manufacturer documentation. Confirm that the D27Z suffix corresponds to the specific tape and reel packaging configuration. Ensure compatibility with existing circuit designs before procurement, as replacement availability may be limited.

RF FETs, MOSFETs Selection Notes

Select this component for high-frequency analog applications requiring low input capacitance. Verify that the required operating frequency does not exceed 450MHz. Ensure the design accommodates the specified thermal resistance values and power dissipation limits under expected ambient conditions.

RF FETs, MOSFETs Part Context

This part belongs to the 2N3819 family of N-channel JFETs originally manufactured by Fairchild Semiconductor. The device is characterized for use in radio frequency circuits where low noise and stable gain are required. It utilizes an epitaxial silicon process for consistent performance across operating temperatures.

RF FETs, MOSFETs Replacement Considerations

Consult official datasheets for equivalent N-channel JFETs with matching pinouts and electrical ratings. Verify that any substitute component meets the 450MHz operational requirement and maintains similar capacitance values for RF applications.

2N3819_D27Z2N3819_D27Z
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