2N4104 TIN/LEAD

$3.05

Description：60V 50MA 300MW TH TRANSISTOR-SMA
Series：-

SKU:377672622648 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N4104 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 50MA 300MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4104 TIN/LEAD

Description：60V 50MA 300MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：450 @ 100µA, 5V
Power - Max：300 mW
Frequency - Transition：540MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N4104 TIN/LEAD

2N4104 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4104 TIN/LEAD is a small-signal NPN bipolar junction transistor housed in a TO-18 metal can package. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 50mA. The device supports a power dissipation of 300mW, making it suitable for low-power switching and amplification tasks. It operates within a temperature range of -65°C to +200°C. The component utilizes tin or lead plating on its terminals and is designed for through-hole mounting applications.

Single Bipolar Transistors Feature Summary

Small-signal NPN configuration optimized for low-noise amplification
Robust metal TO-18 hermetic packaging for environmental stability
High thermal operating capability up to 200°C junction temperature

Single Bipolar Transistors Applications

Low-noise audio pre-amplifier stages
General-purpose signal switching circuits
RF amplifier input stages

Single Bipolar Transistors Procurement Notes

Verify the specific terminal plating option (tin vs. lead) required for your assembly process, as the suffix indicates material composition. Confirm that the TO-18 metal can package dimensions align with your PCB footprint or socket requirements. Ensure that the 50mA current limit and 300mW power dissipation constraints are sufficient for the intended circuit load to prevent thermal runaway.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and hermetic sealing are prioritized over surface-mount convenience. It is appropriate for military, aerospace, or harsh environment applications where plastic packages may fail. Consider the higher cost and larger size compared to modern SMD alternatives, but value the superior thermal handling and radiation hardness inherent to the metal can construction.

Single Bipolar Transistors Part Context

This part belongs to the legacy small-signal transistor family produced by Central Semiconductor. It serves as a rugged alternative to standard plastic-packaged transistors like the 2N3904. The TO-18 form factor distinguishes it from common axial or SMD devices, offering better heat sinking capabilities and physical durability for specialized industrial or defense electronics.