2N4289 TIN/LEAD

$0.33

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-

SKU:9fff293bb593 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N4289 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TH TRANSISTOR-SMALL SIGNAL (. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4289 TIN/LEAD

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：10nA
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 350mV
Power - Max：-
Frequency - Transition：40MHz
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N4289 TIN/LEAD

2N4289 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4289 is a silicon NPN epitaxial planar transistor designed for general-purpose switching and amplification applications. It utilizes an axial leaded DO-35 glass passivated package, ensuring robustness against environmental factors. The device features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 100mA. Thermal characteristics include a maximum junction temperature of 200°C and a total power dissipation of 500mW at 25°C ambient temperature. The component is available with a tin/lead plating finish on its leads to facilitate standard soldering processes in through-hole assembly configurations.

Single Bipolar Transistors Feature Summary

Utilizes epitaxial planar silicon technology for stable electrical performance
Features glass passivation for enhanced environmental protection
Supports high junction temperatures up to 200°C

Single Bipolar Transistors Applications

General-purpose switching circuits
Low-power amplifier stages
Driver circuits for small loads

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix corresponds to the tin/lead lead finish rather than lead-free alternatives when sourcing replacements. Confirm the manufacturer designation as Central Semiconductor Corp to ensure authenticity. Check datasheet revisions for any updates to absolute maximum ratings or thermal resistance values prior to final design integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a reliable NPN switch in a compact axial package. Ensure the circuit voltage does not exceed the 60V collector-emitter breakdown limit. Consider the 500mW power dissipation capability when calculating thermal management requirements for enclosed environments or high-duty cycle operations.

Single Bipolar Transistors Part Context

This part belongs to the family of small-signal silicon NPN transistors commonly used in discrete electronics. It serves as a fundamental active element in analog and digital logic interfaces. The DO-35 package provides a standardized footprint compatible with manual and automated through-hole manufacturing equipment widely used in prototype and low-volume production.