2N4339-E3

Jfets Overview

The Vishay Siliconix 2N4339-E3 is an N-channel Junction Field-Effect Transistor (JFET) housed in a hermetically sealed TO-206AA (TO-18) package. It features a gate-source cutoff voltage range of -0.6 V to -1.8 V and a minimum gate-source breakdown voltage of -50 V. The device provides a typical forward transconductance of 0.8 mS with a maximum saturation drain current of 1.5 mA. Designed for low-noise applications, it exhibits an equivalent input noise voltage of 6 nV/√Hz at 1 kHz.

Jfets Feature Summary

• Hermetically sealed metal can construction suitable for military processing
• Low cutoff voltage accommodates low-level power supplies down to 1 V
• Very low noise characteristics for high-sensitivity signal amplification
• High input impedance with minimal gate leakage current

Jfets Applications

• High-gain, low-noise amplifier stages
• Infrared detector amplifiers
• Ultrahigh input impedance pre-amplifiers
• Low-current, low-voltage battery-powered amplifiers

Jfets Procurement Notes

Verify the component datasheet revision F (Document Number: 70240) against the specific lot code to ensure compliance with the stated electrical limits. Confirm that the TO-206AA package matches the required footprint for through-hole mounting. Check for RoHS compliance status as indicated by the suffix E3 on the ordering part number.

Jfets Selection Notes

Select this JFET when circuit requirements demand a low gate-source cutoff voltage combined with high input impedance. The TO-18 package is appropriate for environments requiring hermetic sealing or military-grade reliability standards. Ensure the design accounts for the specified maximum power dissipation of 300 mW and derating requirements above 25°C.

Jfets Part Context

This component belongs to the 2N4338/4339/4340/4341 series of N-channel JFETs manufactured by Vishay Siliconix. The series is engineered for sensitive amplifier stages operating at low to mid-frequencies. Variants within the series differ primarily in their cutoff voltage ranges and transconductance values while sharing similar packaging and absolute maximum ratings.

Jfets Replacement Considerations

For surface-mount alternatives, consult the J/SST201 series data sheet for devices in TO-226AA (TO-92) and TO-236 (SOT-23) packages. Verify that substitute components match the -50 V breakdown voltage and low noise specifications required for the application.