Single Bipolar Transistors 2N4449UB/TR product image

2N4449UB/TR

$21.90
  • Description:SMALL-SIGNAL BJT
  • Series:-

SKU:07323b9cf729 Category: Brand:

  
  • Quantity
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2N4449UB/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4449UB/TR

  • Description:SMALL-SIGNAL BJT
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 1V
  • Power - Max:400 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N4449UB/TR

2N4449UB/TR

Single Bipolar Transistors Overview

The Microchip Technology 2N4449UB/TR is an NPN silicon small-signal transistor qualified per MIL-PRF-19500/317. It features a collector-emitter voltage of 15 Vdc and a total power dissipation of 0.36 W at +25°C ambient temperature. The device operates within a junction temperature range of -65 to +200°C. Key electrical characteristics include a forward-current transfer ratio (hFE) ranging from 40 to 120, with a maximum turn-on time of 12 ns and turn-off time of 18 ns under specified test conditions.

Single Bipolar Transistors Feature Summary

  • Qualified for military standards per MIL-PRF-19500/317 specifications
  • Designed for high-speed switching applications with nanosecond response times
  • Capable of operation in extreme thermal environments up to +200°C

Single Bipolar Transistors Applications

  • High-speed digital switching circuits
  • Military-grade amplifier stages
  • Pulse generation and timing networks

Single Bipolar Transistors Procurement Notes

Verify the specific revision level against the latest manufacturer documentation before integration. Confirm that the surface mount package variant matches the intended PCB footprint requirements. Ensure compliance with the designated military qualification standards required by the system specification. Cross-reference the ordering suffix to confirm the exact physical package configuration.

Single Bipolar Transistors Selection Notes

Select this component when military reliability and wide operating temperature ranges are mandatory. The device offers a balance of moderate current handling and fast switching speeds suitable for precision analog or digital interfaces. Evaluate the thermal resistance constraints carefully, as power dissipation capabilities decrease significantly above +25°C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2N4449 family of NPN silicon transistors manufactured by Microchip Technology. It shares functional similarities with the 2N2369A series but utilizes a surface mount package configuration. The component is distinct from through-hole variants while maintaining identical electrical performance parameters defined by the military specification.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N2369AU and 2N2369AUA. Verify pinout compatibility and package dimensions before substitution. Ensure the replacement part meets the same MIL-PRF-19500/317 qualification level if military standards are required.

2N4449UB/TR2N4449UB/TR
$21.90
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