2N5088RLRAG

Single Bipolar Transistors Overview

The 2N5088RLRAG is an NPN silicon small-signal transistor in a TO-92 package. It features a maximum collector-emitter voltage of 30V and a continuous collector current of 50mA. The device has a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Maximum power dissipation is 625mW, with an operating temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain for signal amplification
• Low noise characteristics suitable for sensitive circuits
• Through-hole TO-92 packaging for standard mounting

Single Bipolar Transistors Applications

• General purpose switching
• Audio pre-amplification stages
• Small signal amplification

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation matches onsemi specifications. Confirm the TO-92 package type and lead configuration align with design requirements. Ensure the hFE binning meets circuit gain thresholds. Check RoHS compliance status if required by project standards.

Single Bipolar Transistors Selection Notes

Select this component for low-power NPN applications requiring high current gain. The 30V rating suits low-voltage logic interfacing. Consider thermal management for power dissipation limits. Verify compatibility with existing PCB footprints and assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose bipolar transistor family. It serves as a discrete semiconductor solution for analog and digital switching tasks. The TO-92 form factor provides cost-effective through-hole integration for consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors offering similar 30V/50mA ratings. Verify pinout compatibility before substitution. Ensure equivalent hFE and fT specifications are met for functional parity.