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Product Detailed Parameters
- Description：TRANS NPN 50V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100µA, 5V
- Power - Max：625 mW
- Frequency - Transition：30MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5210TF is an NPN general-purpose amplifier transistor designed for low noise and high gain applications. It operates effectively at collector currents ranging from 1 µA to 50 mA. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Key electrical characteristics include a DC current gain (hFE) between 200 and 600, a transition frequency (fT) of 30 MHz, and a noise figure as low as 2.0 dB under specific conditions. It is housed in a SOT-23 package.
Feature Summary
- Designed for low noise performance suitable for sensitive signal amplification
- Provides high DC current gain across various operating currents
- Optimized for general purpose amplifier applications with wide bandwidth
Applications
- Low noise audio pre-amplifiers
- General purpose signal amplification circuits
- High gain amplifier stages
Procurement Notes
Verify the component status carefully as datasheets may indicate obsolete or discontinued status depending on the manufacturing source. Confirm the exact package type matches the required footprint, typically SOT-23 for this marking. Ensure compatibility with the intended thermal management requirements given the power dissipation limits specified in the official documentation.
Selection Notes
Select this component when low noise figures are critical for the application, particularly in the microampere to milliampere collector current range. Consider the 50 V breakdown voltage limits for circuit design. Evaluate the thermal resistance parameters if operating near maximum junction temperatures. Compare against other NPN transistors requiring similar small-signal characteristics and packaging constraints.
Part Context
This part belongs to the family of NPN silicon epitaxial planar transistors used for small-signal amplification. It shares functional similarities with other general-purpose NPN devices but is specifically characterized for its noise performance and gain consistency. The 'TF' suffix typically denotes a specific tape and reel packaging configuration for surface mount assembly.
Replacement Considerations
Consult official cross-reference lists for verified substitutes such as MMBT5210 variants. Ensure replacement parts match the SOT-23 package and maintain equivalent electrical ratings for voltage, current, and noise performance.
