2N5210TFR

Overview

The onsemi 2N5210TFR is an NPN general-purpose amplifier transistor designed for low noise and high gain applications. It operates effectively at collector currents ranging from 1 µA to 50 mA. Key electrical characteristics include a collector-emitter breakdown voltage of 50 V, a continuous collector current rating of 100 mA, and a total device dissipation of 625 mW in the SOT-23 package. The component features a DC current gain (hFE) between 200 and 600, a transition frequency (fT) of 30 MHz, and a noise figure as low as 2.0 dB under specific test conditions.

Feature Summary

• Engineered for low noise performance suitable for sensitive signal amplification
• Provides high DC current gain across a wide range of operating currents
• Capable of operation within a broad junction temperature range

Applications

• Low noise audio pre-amplifiers
• General purpose small-signal amplification circuits
• High gain amplifier stages requiring minimal input noise

Procurement Notes

Verify that the ordering suffix TFR corresponds to the required tape-and-reel packaging configuration for automated assembly processes. Confirm that the component status remains active or available through authorized distribution channels before finalizing procurement plans. Ensure compatibility with standard surface-mount placement equipment specifications.

Selection Notes

Select this component when circuit requirements demand low noise figures combined with moderate current handling capabilities. Evaluate thermal resistance parameters against expected power dissipation levels in the target application environment. Compare noise contours and source resistance requirements to ensure optimal signal-to-noise ratio performance for the intended frequency band.

Part Context

This part belongs to the family of NPN silicon epitaxial planar transistors manufactured by onsemi. It shares functional similarities with other general-purpose amplifier devices but is specifically characterized for low noise operations. The device utilizes standard semiconductor fabrication processes to achieve consistent electrical performance across production batches.

Replacement Considerations

Cross-reference with MMBT5210 for pin-compatible alternatives. Verify that substitute components meet identical breakdown voltage and current gain specifications to maintain circuit integrity without redesigning surrounding passive components.