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Product Detailed Parameters
- Description：TRANS NPN 12V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：12 V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 3mA, 10mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 1V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5224 is a single NPN bipolar junction transistor designed for general-purpose applications. It features a collector-emitter breakdown voltage of 12 V and a maximum continuous collector current of 100 mA. The device is housed in a TO-92-3 through-hole package, offering a power dissipation rating of 625 mW. This silicon-based component is registered with JEDEC and is suitable for low-level amplification and small-signal RF stages.
Feature Summary
- JEDEC-registered silicon NPN construction
- Designed for low-level amplification tasks
- Suitable for small-signal RF stages
Applications
- Low-level amplification circuits
- Small-signal RF stages
- General-purpose switching applications
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as availability varies across suppliers. Confirm that the received unit matches the TO-92-3 package specification and NPN configuration. Check for any obsolete status indicators from distributors, as some sources list this part as no longer manufactured by certain vendors. Ensure the leads are gold-plated and free from solder residue or tarnish upon receipt.
Selection Notes
Select the 2N5224 for circuits requiring a 12 V collector-emitter breakdown voltage and up to 100 mA of collector current. Consider its 625 mW power dissipation capability when designing thermal management solutions. Choose this component over alternatives if a JEDEC-registered NPN transistor in a TO-92-3 package is required for low-level amplification or small-signal RF applications.
Part Context
The 2N5224 belongs to the category of single bipolar transistors (BJT). It is specifically an NPN type, distinguishing it from PNP variants. The component is widely recognized in the electronics industry for its use in small-signal applications. Its JEDEC registration ensures standardization across different manufacturers, although onsemi is a primary documented source for this specific part number.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official datasheets for equivalent NPN transistors with matching 12 V Vceo and 100 mA Ic ratings.
