2N5226 PBFREE

Overview

The Central Semiconductor Corp 2N5226 PBFREE is a single NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter voltage rating of 40 V, a maximum DC collector current of 800 mA, and a power dissipation capacity of 625 mW. The device utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical characteristics include a transition frequency of 150 MHz and a minimum DC current gain of 100 at specified test conditions.

Feature Summary

• Single NPN configuration within the TO-92-3 through-hole package
• Silicon planar epitaxial construction for reliable operation
• Designed for low-voltage amplification and switching tasks

Applications

• General-purpose signal amplification circuits
• Low-power switching applications
• Audio pre-amplifier stages

Procurement Notes

Verify the specific datasheet revision to confirm exact hFE binning limits and thermal resistance values before finalizing circuit designs. Ensure that the TO-92-3 lead form matches the target PCB footprint requirements. Cross-reference the RoHS compliance status with local regulatory standards applicable to the end product assembly.

Selection Notes

Select this component when a standard NPN transistor with moderate current handling and low voltage ratings is required. Compare the 150 MHz transition frequency against the operating speed needs of the application. Evaluate the 625 mW power dissipation limit against expected thermal loads to ensure adequate heat sinking or airflow provisions are available.

Part Context

This part belongs to the standard discrete semiconductor transistor family produced by Central Semiconductor Corp. It serves as a common replacement for legacy 2N5226 specifications in consumer electronics and industrial control modules. The PBFREE suffix indicates compliance with lead-free manufacturing processes mandated by environmental directives.