2N5237

2N5237

$16.02
  • Description:TRANS NPN 120V 10A TO-5AA
  • Series:-

SKU:bee9f7b18a71 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 120V 10A TO-5AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 1A, 5V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:-
  • Qualification:-

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2N5237

Overview

The Microchip Technology 2N5237 is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-5AA metal can package. It features a maximum DC collector current of 10 A and a collector-emitter breakdown voltage (VCEO) of 120 V. The device supports a collector-base voltage (VCBO) of 150 V and an emitter-base voltage (VEBO) of 10 V. With a power dissipation rating of 1 W, it operates within a temperature range of -65°C to +200°C. The collector-emitter saturation voltage is specified at 600 mV.

Feature Summary

  • High current handling capability with a 10 A maximum DC collector current rating
  • Robust voltage tolerance supporting up to 120 V collector-emitter and 150 V collector-base voltages
  • Extended thermal stability allowing operation up to a junction temperature of +200°C
  • Single NPN configuration housed in a hermetically sealed TO-5AA metal can package

Applications

  • High-power switching circuits requiring robust current handling
  • Linear amplifier stages in audio or RF applications
  • Industrial control systems operating under extreme thermal conditions
  • Military-grade electronic assemblies requiring high reliability

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the package type matches the required TO-5AA footprint. Ensure the specific lot number complies with project quality standards. Cross-reference the RoHS status if environmental compliance is mandatory for the final assembly. Validate electrical parameters against the latest Microchip Technology data sheet before integration.

Selection Notes

Select this component when high collector current and wide temperature operation are critical. The TO-5AA package provides superior thermal performance compared to plastic alternatives. Consider the 1 W power dissipation limit during circuit design. Evaluate the 120 V breakdown voltage against peak transient loads. Ensure the driving circuit can supply sufficient base current to maintain saturation at 10 A.

Part Context

The 2N5237 belongs to the legacy military-grade BJT family produced by Microchip Technology. It shares functional similarities with other high-power NPN transistors in the TO-5AA series. This component is often used in replacement scenarios for older industrial equipment. Its specification aligns with standard MIL-SPEC requirements for ruggedness. The part remains relevant for maintaining existing high-reliability hardware systems.

Replacement Considerations

Consult official Microchip documentation for direct cross-reference part numbers. Verify pinout compatibility with the original TO-5AA socket. Ensure thermal resistance characteristics match the heat sink design. Check that voltage ratings exceed the original circuit requirements.

2N52372N5237
$16.02
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