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Product Detailed Parameters
- Description：TRANS NPN 120V 10A TO39
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：10:00 AM
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 1A, 10A
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 5A, 5V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39 (TO-205AD)
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5237S is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-5AA metal can package. It features a maximum DC collector current of 10 A, a collector-emitter breakdown voltage (VCEO) of 120 V, and a collector-base breakdown voltage (VCBO) of 150 V. The device has an emitter-base voltage (VEBO) rating of 10 V and a typical collector-emitter saturation voltage of 600 mV. Power dissipation is rated at 1 W, with an operating temperature range spanning from -65°C to +200°C.
Feature Summary
- High current handling capability suitable for power switching applications
- Wide thermal operating range extending up to 200°C junction temperature
- Robust voltage ratings for high-voltage circuit protection
Applications
- Power switching circuits
- High-voltage amplifier stages
- Industrial control systems
Procurement Notes
Verify the specific suffix 'S' against the manufacturer's official datasheet to confirm if it denotes a specific binning or testing variation compared to the standard 2N5237. Confirm RoHS compliance status as the base model may be non-compliant. Ensure the TO-5AA package availability matches project requirements before finalizing procurement plans.
Selection Notes
Select this component when a high-current NPN BJT with a hermetic metal can package is required. The 10 A rating and 120 V breakdown voltage make it suitable for demanding power applications. Consider the 1 W power dissipation limit and the need for adequate heat sinking within the specified temperature range during design integration.
Part Context
The 2N5237 series belongs to Microchip's legacy discrete semiconductor portfolio, often used in ruggedized electronics. It shares characteristics with similar high-power NPN transistors like the 2N4150 but offers higher voltage ratings. These components are typically utilized in military, aerospace, or industrial environments where reliability and wide temperature operation are critical.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes. Verify that any replacement maintains the 10 A current and 120 V voltage ratings. Ensure the alternative package matches the TO-5AA form factor for mechanical compatibility.
