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The Microchip Technology 2N5241 is a power NPN silicon bipolar junction transistor housed in a TO-3 metal can package. It supports a maximum collector current of 5 A and a collector-emitter breakdown voltage of 400 V. The device features a maximum power dissipation of 125 W and a minimum DC current gain (hFE) of 15 at specified test conditions. Operating temperature ranges extend from -65°C to 200°C for the junction.
Verify component authenticity through authorized channels due to historical manufacturing changes. Confirm RoHS compliance status as original specifications may vary by production era. Validate package dimensions against legacy drawings before integration. Check for specific manufacturer suffixes that indicate material or process variations. Ensure thermal management design accommodates the TO-3 flange mount requirements.
Select this component for applications demanding high voltage isolation and significant current handling in a through-hole metal package. Consider the TO-3 form factor for superior heat dissipation compared to plastic packages. Evaluate the 400 V rating against system peak voltages to ensure adequate safety margins. Assess the 5 A continuous current limit for load requirements.
This part belongs to the legacy power transistor family originally defined by JEDEC standards. Microchip Technology acquired relevant assets from previous manufacturers, maintaining continuity for critical industrial and aerospace designs. The TO-3 package remains a standard for high-power discrete semiconductors requiring direct chassis mounting.
Direct substitutes include the Central Semiconductor 2N6545 PBFREE, which shares similar electrical characteristics and package type. Verify pinout compatibility and thermal resistance values when cross-referencing alternative sources.