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The onsemi 2N5246_D74Z is an N-channel RF amplifier JFET in a TO-92 package. It features a Drain-Gate Voltage of 30 V and Gate-Source Voltage of -30 V. The device operates within a junction temperature range of -55 to 150 °C. Electrical characteristics include a Gate-Source Breakdown Voltage of -30 V, Zero-Gate Voltage Drain Current (IDSS) ranging from 1.5 to 7.0 mA, and Forward Transfer Conductance (gfs) between 3000 and 9500 µmhos at 1.0 kHz.
Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor. Confirm that the specific D74Z suffix corresponds to the required tape and reel packaging format if applicable. Ensure the received units match the TO-92 physical dimensions and pinout configuration specified in the datasheet before integration into the design.
Select this component when designing circuits for HF or VHF frequency bands that demand low noise performance. The N-channel configuration and specific transconductance values make it suitable for sensitive receiver applications. Verify that the TO-92 through-hole package aligns with the board layout requirements and thermal dissipation capabilities of the system.
This part belongs to the 2N5246 family of N-channel RF amplifiers. Originally manufactured by Fairchild Semiconductor, it is now distributed under the onsemi brand. The device utilizes a silicon junction field-effect transistor structure housed in a standard TO-92 plastic encapsulation, providing a compact solution for discrete RF signal processing tasks.
Consult the official datasheet for cross-reference information regarding equivalent devices. Verify compatibility with existing circuit parameters before substituting with other N-channel JFETs.
The maximum operating junction temperature is 150 °C.
The forward transfer conductance ranges from 3000 to 9500 µmhos at 1.0 kHz.