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Product Detailed Parameters
- Description：TRANS NPN 60V 30A TO204AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：30 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 6A, 30A
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 15A, 2V
- Power - Max：5 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204AA (TO-3)
- Grade：-
- Qualification：-
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Overview
The 2N5302 is a high-power NPN silicon bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for robust power switching applications and features a collector-emitter voltage of 60 V, a collector current capacity of 30 A, and a maximum power dissipation of 5 W. The device operates within a temperature range of -65°C to +200°C junction temperature. It utilizes a TO-204AA (TO-3) through-hole package and meets MIL-PRF-19500/456 qualification standards.
Feature Summary
- High power handling capability with 30 A continuous collector current
- Extended thermal operation up to 200°C junction temperature
- Qualified per military reliability standard MIL-PRF-19500/456
Applications
- Military-grade power switching circuits
- High-current industrial control systems
- Ruggedized amplifier stages requiring high thermal stability
Procurement Notes
Verify the specific ordering suffix against the manufacturer's datasheet to confirm exact electrical tolerances and qualification levels. Confirm RoHS compliance status as indicated in official documentation, noting that standard versions may not meet modern environmental directives. Ensure the TO-204AA package type matches the target PCB or chassis mounting requirements before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high current density and extreme temperature resilience. The TO-3 package facilitates direct heatsinking for effective thermal management. Compare specifications against similar military-qualified BJTs if alternative sourcing is necessary, ensuring voltage and current ratings align with the system's peak load demands.
Part Context
This part belongs to Microchip's portfolio of qualified discrete semiconductors derived from legacy military specifications. It serves as a high-reliability alternative to commercial-grade transistors in environments where failure is not an option. The 2N5302 shares the same physical footprint and basic electrical architecture as other members of the 2N53xx series, differing primarily in breakdown voltage ratings.
Replacement Considerations
- JAN2N5302
FAQ
What is the maximum junction temperature for the 2N5302?
The maximum operating junction temperature is +200°C.
Is the 2N5302 qualified to military standards?
Yes, the device is qualified per MIL-PRF-19500/456.
What package style does the 2N5302 use?
It uses a TO-204AA (TO-3) through-hole package.
