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The Central Semiconductor Corp 2N5306 APM PBFREE is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 4 V. The device supports a maximum continuous DC collector current of 300 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'APM' against official datasheets to confirm package type and marking variations. Ensure compatibility with Pb-Free soldering profiles provided by the manufacturer. Confirm that the 2N5306 designation aligns with the intended circuit requirements for voltage and current ratings before integration.
Select this component for applications requiring moderate current handling and high-speed switching in a through-hole TO-92 package. Consider the 250 MHz transition frequency for RF or pulse applications. Evaluate thermal management needs given the 625 mW power dissipation limit and wide operating temperature range.
This part belongs to the 2N53 series of small-signal transistors manufactured by Central Semiconductor. The series includes complementary PNP variants such as the 2N5366. These devices are typically used in consumer electronics and industrial control systems where reliable discrete switching is required.
Direct substitutes may include other NPN transistors with similar 40V/300mA ratings and TO-92 packaging, such as the 2N3904 if lower speed is acceptable. Verify pinout compatibility and hFE ranges when cross-referencing with generic equivalents.