2N5306

Description：TRANS NPN DARL 25V 1.2A TO-92-3
Series：-

SKU:ca3df0b2e9b2 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 25V 1.2A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：1.2 A
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：7000 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5306

Overview

The onsemi 2N5306 is an NPN Darlington transistor housed in a TO-92 package. It features a collector-emitter voltage of 25 V and a continuous collector current rating of 1.2 A. The device provides extremely high DC current gain, ranging from 7,000 to 70,000 at low currents. Thermal characteristics include a total device dissipation of 625 mW and a junction-to-ambient thermal resistance of 200 °C/W. Operating temperatures span from -55 °C to +150 °C.

Feature Summary

Designed for applications requiring extremely high current gain at currents up to 1.0 A
Utilizes a standard TO-92 through-hole package configuration

Applications

High-gain amplification circuits
Switching applications requiring substantial base drive reduction
Interface logic to loads with moderate current demands

Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor. Confirm that the specific supplier offers the correct TO-92 variant matching the absolute maximum ratings. Ensure compliance with RoHS directives if required for your assembly process. Cross-reference datasheet revisions to confirm electrical parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when circuit designs demand exceptionally high current gain to minimize base drive requirements. The 25 V collector-emitter voltage limits suitability for higher voltage power switching tasks. Consider the 625 mW power dissipation limit and the resulting need for adequate thermal management or heat sinking during continuous operation phases.

Part Context

This NPN Darlington transistor belongs to the broader family of bipolar junction transistors designed for high-gain signal processing. While originally manufactured by Fairchild Semiconductor, it is now distributed under the onsemi brand portfolio. The device serves as a foundational discrete semiconductor component for analog and digital interface stages.