2N5308 APM TIN/LEAD

$0.54

Description：300MA 40V TH TRANSISTOR-SMALL SI
Series：-

SKU:04ba8f79472c Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：300MA 40V TH TRANSISTOR-SMALL SI
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：7000 @ 2mA, 5V
Power - Max：-
Frequency - Transition：60MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5308 APM TIN/LEAD

Overview

The 2N5308 APM TIN/LEAD is a single NPN Darlington transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage (VCEO) of 40 V and a maximum collector-base voltage (VCBO) of 40 V. The device supports a maximum DC collector current of 500 mA, with a specific continuous rating of 300 mA. Power dissipation reaches 1.5 W in the TO-92-3 through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 7000 at 2 mA and 5 V, a transition frequency (fT) of 60 MHz, and an emitter-base voltage (VEBO) of 12 V. Operating temperature ranges from -65°C to +150°C.

Feature Summary

High DC current gain capability for sensitive signal amplification
Wide operating temperature range suitable for harsh environments
Through-hole mounting configuration for robust mechanical stability

Applications

General purpose amplifier circuits
Switching applications requiring high gain
Industrial control systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm lead-free status and tin-lead plating specifications. Confirm availability as distribution channels may vary. Ensure the selected variant matches the required RoHS compliance and environmental standards for the intended deployment. Cross-reference datasheet revisions to ensure parameter consistency.

Selection Notes

Select this component when high current gain is critical for low-level signal processing. The TO-92-3 package offers a balance of thermal performance and board space efficiency for through-hole designs. Consider the 40 V voltage rating and 500 mA current limit when designing load paths. Verify that the 60 MHz bandwidth meets the frequency requirements of the target application circuit.

Part Context

This part belongs to the 2N5308 series of NPN Darlington transistors produced by Central Semiconductor. The series is characterized by high gain and reliability for general-purpose electronic applications. The APM designation typically refers to specific packaging or material attributes defined by the manufacturer. These devices are commonly used in discrete semiconductor circuits where standard bipolar junction transistor performance is insufficient.