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The 2N5308 TRE PBFREE is a single NPN Darlington transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device supports a maximum collector-emitter voltage of 40 V, a collector-base voltage of 40 V, and an emitter-base voltage of 12 V. It features a maximum DC collector current of 500 mA and a power dissipation rating of 1.5 W. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'TRE' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure RoHS compliance status matches project requirements. Cross-reference the part number with authorized distributors to confirm active production status and availability before finalizing procurement plans.
Select this component when a high-gain NPN switching or amplifying element is required in a through-hole design. The 40 V voltage rating suits low-voltage logic interfacing. Compare the 1.5 W power dissipation against thermal constraints. Verify that the TO-92-3 footprint aligns with the target PCB layout and assembly capabilities.
This part belongs to the Central Semiconductor Darlington transistor family. It shares the TO-92-3 form factor with other devices in the series but differs in polarity and voltage ratings. The 2N5308 designation indicates a specific NPN variant within the broader discrete semiconductor portfolio offered by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material.