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Product Detailed Parameters
- Description：300MA 40V TH TRANSISTOR-SMALL SI
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：7000 @ 2mA, 5V
- Power - Max：-
- Frequency - Transition：60MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5308 TRE TIN/LEAD is an NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V. The emitter-base voltage (VEBO) rating is 12 V. Maximum DC collector current is specified at 500 mA, with a continuous collector current of 300 mA. Power dissipation (Pd) reaches 1.5 W. The device operates within a temperature range of -65 °C to +150 °C. Minimum DC current gain (hFE) is 7000 at 5 V and 2 mA. The transition frequency (fT) is 60 MHz.
Feature Summary
- High DC current gain capability for sensitive signal amplification
- Wide operating temperature range suitable for harsh environments
- Through-hole mounting configuration for standard PCB integration
Applications
- Direct-coupled amplifier stages
- Switching circuits requiring high input impedance
- Logic interface drivers
Procurement Notes
Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's official datasheet to confirm plating composition and packaging type. Ensure the requested quantity aligns with the manufacturer's minimum order requirements and lead times. Confirm RoHS compliance status if required by the end application specifications before finalizing procurement.
Selection Notes
Select this component when a high-gain NPN Darlington configuration is required in a TO-92-3 package. Verify that the 40 V voltage ratings and 1.5 W power dissipation meet the circuit's electrical demands. Consider the 60 MHz transition frequency for bandwidth limitations. Ensure the thermal management strategy supports the specified power dissipation within the operating temperature range.
Part Context
The 2N5308 is a legacy NPN Darlington transistor originally standardized under the JEDEC 2N series. Central Semiconductor manufactures this component as part of their discrete semiconductor portfolio, offering it in various packaging and plating options. The TO-92-3 package provides a compact form factor for through-hole applications, maintaining compatibility with historical designs while meeting modern manufacturing standards.
Replacement Considerations
Cross-reference equivalent NPN Darlington transistors in TO-92 packages with similar voltage and current ratings. Verify pinout compatibility and electrical parameter overlaps before substitution.
