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The Microchip Technology 2N5316 is a high-power NPN silicon transistor qualified to MIL-PRF-19500/456 standards. It features a collector-emitter voltage of 60V, a collector-base voltage of 60V, and an emitter-base voltage of 5.0V. The device supports a continuous collector current of 10A and a total power dissipation of 125W at 25°C case temperature. It is designed for robust performance in demanding electronic applications requiring high current handling capabilities.
Verify the specific qualification level (JANTX or JANTXV) required for your application against the manufacturer's datasheet. Confirm that the package type matches your thermal management design. Ensure compliance with all relevant military specifications before finalizing procurement decisions.
Select this component when high current capacity and military-grade reliability are required. Consider the 125W power dissipation rating and ensure adequate heat sinking is implemented. Verify the 60V voltage ratings align with your circuit's maximum operating conditions to prevent device failure.
The 2N5316 belongs to a series of high-power NPN transistors manufactured by Microchip Technology. These devices are part of a broader portfolio of discrete semiconductors designed for rugged environments. The family includes variants like the 2N5302, sharing similar structural characteristics but differing in specific electrical parameters.
Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical ratings such as VCEO, IC, and PD to ensure compatibility. Do not assume direct interchangeability without verifying specific qualification levels and pin configurations.