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The 2N5322E3 is a PNP silicon epitaxial planar transistor manufactured by Microchip Technology. It is housed in a TO-5AA metal case and designed for high-voltage medium-power applications. The device supports a collector current of 2 A, a collector-emitter voltage of 75 V, and power dissipation up to 10 W. Qualified under MIL-PRF-19500 standards, it serves as a robust component for industrial and commercial switching circuits requiring reliable bipolar junction transistor performance.
Verify the specific suffix E3 confirms lead-free compliance and RoHS status against the manufacturer's latest documentation. Ensure the TO-5AA package variant matches the required mechanical footprint. Cross-reference the MIL-PRF-19500 qualification level with project specifications to confirm suitability for aerospace or military-grade environments where such screening is mandatory.
Select this component when a PNP configuration with 75 V blocking capability and 2 A current handling is required. The TO-5AA metal case provides superior thermal management compared to plastic packages. Consider complementary devices like the 2N5323 for push-pull topologies. Validate that the 10 W power dissipation rating aligns with the thermal design constraints of the target application environment.
This part belongs to the 2N5320/2N5322 series of high-performance, low-frequency silicon power switching transistors. These devices are engineered for medium-power applications, offering current ratings up to 2 A. The series is widely used in industrial settings where robustness and high-voltage tolerance are critical for system reliability and long-term operational stability.
The 2N5323 is the NPN complementary counterpart within the same series. Verify pinout compatibility and voltage ratings when substituting. No direct cross-brand equivalents are confirmed in public data without detailed parameter matching.