2N5323

Overview

The onsemi 2N5323 is a small signal PNP silicon bipolar junction transistor housed in a TO-5 metal can package. It features a single-element configuration with three terminals. The device supports a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. It exhibits a minimum DC current gain (hFE) of 40. The component is classified as non-RoHS compliant and contains lead.

Feature Summary

• PNP polarity silicon construction
• Metal cylindrical TO-5 packaging
• Single-element discrete design

Applications

• General purpose switching applications
• Small signal amplification circuits

Procurement Notes

Verify RoHS compliance status prior to integration, as the 2N5323 is identified as non-compliant and leaded. Confirm that the TO-5 through-hole form factor aligns with the target PCB layout requirements. Ensure the supplier provides original manufacturer documentation to validate the 2 A current rating and 50 V voltage specifications for the specific batch.

Selection Notes

Select this component when a robust metal-can PNP transistor is required for high-current switching or linear operation. The TO-5 package offers superior thermal dissipation compared to plastic alternatives. Verify that the 50 V collector-emitter voltage rating meets the circuit's peak operating conditions and that the 2 A continuous current capacity satisfies load demands without exceeding thermal limits.

Part Context

The 2N5323 belongs to the family of general-purpose small signal transistors manufactured by onsemi. It serves as a PNP counterpart to NPN variants like the 2N5321 within the same voltage and current class. These devices are commonly utilized in legacy designs or industrial equipment requiring the mechanical stability and thermal performance of metal can packages.

Replacement Considerations

Cross-reference with other PNP transistors rated for 50 V and 2 A in TO-5 packages. Verify pinout compatibility and hFE ranges before substitution.