2N5335

Overview

The 2N5335 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in the TO-204AA package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 80 V and a continuous collector current (Ic) of 5 A. The device features a power dissipation rating of 6 W at 25°C ambient temperature, with an extended operating junction temperature range up to +200°C. The transition frequency (fT) is specified at 30 MHz, indicating suitability for medium-frequency switching and amplification applications.

Feature Summary

• High current handling capability with a 5 A continuous collector current rating
• Extended thermal stability supporting operation up to +200°C junction temperature
• Robust power dissipation performance rated at 6 W in standard through-hole packaging

Applications

• General-purpose power switching circuits
• Medium-power amplifier stages
• Industrial control systems requiring high current drive

Procurement Notes

Verify the specific suffix or variant code against the manufacturer's latest datasheet to ensure compatibility with required pin configurations and thermal characteristics. Confirm RoHS compliance status if restricted substances are mandated for the target assembly. Cross-reference the ordering part number with official Microchip documentation to validate manufacturing origin and revision level before finalizing procurement.

Selection Notes

Select this component when designing circuits that require moderate voltage blocking combined with significant current capacity in a single discrete package. The 80 V breakdown voltage provides adequate headroom for low-voltage DC systems, while the 5 A rating supports substantial load currents. Ensure the thermal management solution can handle the 6 W dissipation, particularly if operating near the upper temperature limits.

Part Context

This component belongs to Microchip Technology's discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor (BJT) category. It serves as a fundamental building block for power electronics, offering a reliable alternative to integrated solutions for high-current, low-to-medium voltage applications where discrete control and ruggedness are prioritized.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalent parts. Generic replacements may differ in gain bandwidth, saturation voltage, or thermal resistance. Verify that any substitute maintains the same pinout and meets or exceeds the 80 V / 5 A / 6 W specifications without compromising safety margins.